Contrast inversion of the apparent barrier height of Pb thin films in scanning tunneling microscopy

被引：10

作者：

Becker, Michael ^{[1
]}

Berndt, Richard ^{[1
]}

机构：

[1] Univ Kiel, Inst Expt & Angew Phys, D-24098 Kiel, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 03期

关键词：

adsorbed layers; electronic density of states; lead; metallic thin films; quantum wells; scanning tunnelling microscopy; silver; work function; WORK FUNCTION; SURFACE; DEPOSITION; ADSORPTION; AG(111); DENSITY; LEAD;

D O I：

10.1063/1.3291114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy measurements of the apparent height of the tunneling barrier are analyzed for Pb islands on Ag(111). The apparent barrier height (ABH) significantly varies with the bias voltage. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of the ABH. Using model calculations, these variations are interpreted in terms of the strongly modulated local density of states of thin Pb films, which is caused by quantum well states.

引用

页数：3

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