InP heterojunction bipolar transistor (HBT) technology for power applications

被引：0

作者：

Kobayashi, KW ^{[1
]}

Oki, AK ^{[1
]}

Gutierrez-Aitken, A ^{[1
]}

Chin, P ^{[1
]}

Tran, LT ^{[1
]}

Yang, LW ^{[1
]}

Sawdai, D ^{[1
]}

Kaneshiro, E ^{[1
]}

Grossman, PC ^{[1
]}

Sato, K ^{[1
]}

Block, TR ^{[1
]}

Yen, HC ^{[1
]}

Streit, DC ^{[1
]}

机构：

[1] TRW Co Inc, Div Elect & Technol, Redondo Beach, CA 90278 USA

来源：

COMPOUND SEMICONDUCTOR POWER TRANSISTORS II AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXII) | 2000年 / 2000卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

in this paper we describe some of the recent developments of InP HBT power devices and MMICs and discuss this technology's enabling capability for wireless, satellite, and mm-wave power applications.

引用

页码：69 / 81

页数：13

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