High-power SiGe heterojunction bipolar transistor (HBT) with multiple emitter fingers

被引：0
|
作者：
Shen Pei [1 ]
Zhang Wanrong [1 ]
Jin Dongyue [1 ]
Xie Hongyun [1 ]
Li Jia [1 ]
Gan Junning [1 ]
机构：
[1] Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100022, Peoples R China
来源：
EXTENDED ABSTRACTS 2008 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY | 2008年
关键词：
D O I：
10.1109/IWJT.2008.4540028
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：107 / 110
页数：4
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