Growth and characterization of boron carbon nitride films with low dielectric constant

被引：19
|
作者：
Tai, T [1 ]
Sugiyama, T [1 ]
Sugino, T [1 ]
机构：
[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan
来源：
DIAMOND AND RELATED MATERIALS | 2003年 / 12卷 / 3-7期
关键词：
BCN film; dielectric constant; Hg lamp irradiation; annealing;
D O I：
10.1016/S0925-9635(02)00344-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline boron carbon nitride (BCN) films are synthesized by plasma-assisted chemical vapor deposition. Effect of the mercury (Hg) lamp irradiation and annealing processes on the dielectric constant of the BCN films are investigated. The dielectric constant is estimated from the accumulation region of the capacitance-voltage characteristics of Cu/BCN/p-Si samples. It is found that the dielectric constant is reduced by the Hg lamp irradiation or by the annealing process. In comparison with the as-grown BCN film, the B-C bond increases by the irradiation. On the other hand, the C-H and C=C bonds decrease after annealing. A dielectric constant as low as 2.1 is achieved for the BCN film, which is treated by the annealing process. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1117 / 1121
页数：5
相关论文
共 50 条
  • [31] Preparation and characterization of cubic boron nitride and metal boron nitride films
    Gissler, W.
    Surface and Interface Analysis, 1994, 22 (01) : 139 - 148
  • [32] New methodologies for characterization of low dielectric constant thin films
    Ryan, ET
    Cho, TH
    Malik, I
    Zhao, JH
    Lee, JK
    Ho, PS
    LOW-DIELECTRIC CONSTANT MATERIALS III, 1997, 476 : 135 - 146
  • [33] Synthesis and characterization of porous polymeric low dielectric constant films
    Yuhuan Xu
    D. W. Zheng
    Yipin Tsai
    K. N. Tu
    Bin Zhao
    Q. Z. Liu
    Maureen Brongo
    Chung Wo Ong
    Chung Loong Choy
    George T. T. Sheng
    C. H. Tung
    Journal of Electronic Materials, 2001, 30 : 309 - 313
  • [34] Characterization of nanoporous low dielectric constant thin films.
    Huang, QR
    Frank, CW
    Mecerreyes, D
    Miller, RD
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2001, 221 : U424 - U424
  • [35] Synthesis and characterization of templating low dielectric constant organosilicate films
    Yu, SZ
    Wong, TKS
    Hu, X
    Pita, K
    Ligatchev, V
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (05) : F123 - F127
  • [36] Synthesis and characterization of porous polymeric low dielectric constant films
    Xu, Y
    Zheng, DW
    Tsai, Y
    Tu, KN
    Zhao, B
    Liu, QZ
    Brongo, M
    Ong, CW
    Choy, CL
    Sheng, GTT
    Tung, CH
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (04) : 309 - 313
  • [37] Characterization of Boron Nitride Thin Films
    Chubarov, M.
    Pedersen, H.
    Hogberg, H.
    Filippov, S.
    Engelbrecht, J. A. A.
    O'Connel, J.
    Henry, A.
    2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), 2013,
  • [38] GROWTH AND CHARACTERIZATION OF EPITAXIAL CUBIC BORON-NITRIDE FILMS ON SILICON
    DOLL, GL
    SELL, JA
    TAYLOR, CA
    CLARKE, R
    PHYSICAL REVIEW B, 1991, 43 (08): : 6816 - 6819
  • [39] GROWTH AND CHARACTERIZATION OF CUBIC BORON-NITRIDE THIN-FILMS
    KESTER, DJ
    AILEY, KS
    LICHTENWALNER, DJ
    DAVIS, RF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (06): : 3074 - 3081
  • [40] Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization
    Grill, A
    Neumayer, DA
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) : 6697 - 6707
12345