Growth and characterization of boron carbon nitride films with low dielectric constant

被引：19
|
作者：
Tai, T [1 ]
Sugiyama, T [1 ]
Sugino, T [1 ]
机构：
[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan
来源：
DIAMOND AND RELATED MATERIALS | 2003年 / 12卷 / 3-7期
关键词：
BCN film; dielectric constant; Hg lamp irradiation; annealing;
D O I：
10.1016/S0925-9635(02)00344-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline boron carbon nitride (BCN) films are synthesized by plasma-assisted chemical vapor deposition. Effect of the mercury (Hg) lamp irradiation and annealing processes on the dielectric constant of the BCN films are investigated. The dielectric constant is estimated from the accumulation region of the capacitance-voltage characteristics of Cu/BCN/p-Si samples. It is found that the dielectric constant is reduced by the Hg lamp irradiation or by the annealing process. In comparison with the as-grown BCN film, the B-C bond increases by the irradiation. On the other hand, the C-H and C=C bonds decrease after annealing. A dielectric constant as low as 2.1 is achieved for the BCN film, which is treated by the annealing process. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1117 / 1121
页数：5
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