Quantum confinement energies in zinc-blende III-V and group IV semiconductors

被引：55
|
作者：
Allan, G [1 ]
Niquet, YM [1 ]
Delerue, C [1 ]
机构：
[1] Inst Elect & Microelectron Nord, Dept Inst Super Electron Nord, F-59652 Villeneuve Dascq, France
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 05期
关键词：
D O I：
10.1063/1.127070
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Blueshift of the hand gap due to quantum confinement is calculated in a tight-binding model for a series of nine III-V zinc-blende AB (A=Al, Ga, or In, B=As, P, or Sb) and two diamond group-IV (Si and Ge) semiconductor clusters. Analytic expressions for the highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels are given as a function of the cluster size. Comparison is made to results obtained by the pseudopotential method and to experimental results. (C) 2000 American Institute of Physics. [S0003-6951(00)00431-9].
引用
收藏
页码：639 / 641
页数：3
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