The effects of neutron irradiation on gamma sensitivity of linear integrated circuits

被引：21
|
作者：
Gorelick, JL [1 ]
Ladbury, R
Kanchawa, L
机构：
[1] Boeing Satellite Syst, Los Angeles, CA 90009 USA
[2] GSFC, Orbital Sci, Mt Airy, MD 21771 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期
关键词：
neutron irradiation; total ionizing dose (TID) effects;
D O I：
10.1109/TNS.2004.839245
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dozen linear bipolar microcircuits were first irradiated with neutrons then gammas and compared to the same devices exposed to gammas only. The data show that neutron irradiation can affect subsequent total dose behavior. This has significant hardness assurance implications.
引用
收藏
页码：3679 / 3685
页数：7
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