MMIC wideband low noise amplifier

被引：0
|
作者：
Luqueze, MA [1 ]
Consonni, D [1 ]
Yamada, CY [1 ]
机构：
[1] Univ Sao Paulo, Escola Politecn, LME, Microelect Lab,Dept Elect Engn, BR-05424970 Sao Paulo, Brazil
来源：
1999 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 & 2: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYS | 1999年
关键词：
MMIC; low-noise amplifier; wideband microwave circuits; PHEMT microwave circuit; microwave package;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work describes the development of a monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) based on a 40 GHz PHEMT (pseudomorphic high electron mobility transistor) GaAs technology. The circuit operates from 16 to 25 GHz band, with gain greater than 14 dB and noise figure lower than 3 dB. The performance of the MMIC amplifier mounted in a commercial ceramic package is also presented.
引用
收藏
页码：264 / 266
页数：3
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