Thienoacene dimers based on the thieno[3,2-b] thiophene moiety: synthesis, characterization and electronic properties

被引:66
|
作者
Niebel, Claude [1 ]
Kim, Yeongin [2 ]
Ruzie, Christian [1 ]
Karpinska, Jolanta [1 ]
Chattopadhyay, Basab [1 ]
Schweicher, Guillaume [1 ]
Richard, Audrey [1 ]
Lemaur, Vincent [4 ]
Olivier, Yoann [4 ]
Cornil, Jerome [4 ]
Kennedy, Alan R. [5 ]
Diao, Ying [3 ]
Lee, Wen-Ya [3 ]
Mannsfeld, Stefan [6 ]
Bao, Zhenan [3 ]
Geerts, Yves H. [1 ]
机构
[1] Univ Libre Bruxelles, Polymer Chem Lab, B-1050 Brussels, Belgium
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[3] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[4] Univ Mons, Serv Chim Mat Nouveaux, B-7000 Mons, Belgium
[5] Univ Strathclyde, Dept Pure & Appl Chem, Glasgow G1 1XL, Lanark, Scotland
[6] Tech Univ Dresden, Ctr Adv Elect Dresden, D-01062 Dresden, Germany
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; ENERGY-LEVEL ALIGNMENT; ORGANIC SEMICONDUCTORS; CHARGE-TRANSPORT; CONTACT RESISTANCE; HIGH-PERFORMANCE; SINGLE-CRYSTALS; LIQUID-CRYSTALS;
D O I
10.1039/c4tc02158d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two thienoacene dimers based on the thieno[3,2-b] thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm(2) V-1 s(-1).
引用
收藏
页码:674 / 685
页数:12
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