Coarse-grained molecular dynamics modeling of the kinetics of lamellar block copolymer defect annealing

被引:12
|
作者
Peters, Andrew J. [1 ]
Lawson, Richard A. [1 ]
Nation, Benjamin D. [1 ]
Ludovice, Peter J. [1 ]
Henderson, Clifford L. [1 ]
机构
[1] Georgia Inst Technol, Chem & Biomol Engn, 311 Ferst Dr NW, Atlanta, GA 30332 USA
来源
基金
美国国家科学基金会;
关键词
directed self-assembly; defects; annealing; kinetics; coarse-grained; molecular dynamics; ORDER-DISORDER TRANSITION; MICROPHASE SEPARATION; DIBLOCK COPOLYMERS; LITHOGRAPHY; SIMULATIONS; INTEGRATION; DIFFUSION; PATTERNS; FEATURES; NEUTRON;
D O I
10.1117/1.JMM.15.1.013508
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
State-of-the-art block copolymer (BCP)-directed self-assembly (DSA) methods still yield defect densities orders of magnitude higher than is necessary in semiconductor fabrication despite free-energy calculations that suggest equilibrium defect densities are much lower than is necessary for economic fabrication. This disparity suggests that the main problem may lie in the kinetics of defect removal. This work uses a coarse-grained model to study the rates, pathways, and dependencies of healing a common defect to give insight into the fundamental processes that control defect healing and give guidance on optimal process conditions for BCP-DSA. It is found that bulk simulations yield an exponential drop in defect heal rate above chi N similar to 30. Thin films show no change in rate associated with the energy barrier below chi N similar to 50, significantly higher than the chi N values found previously for self-consistent field theory studies that neglect fluctuations. Above chi N similar to 50, the simulations show an increase in energy barrier scaling with 1/2 to 1/3 of the bulk systems. This is because thin films always begin healing at the free interface or the BCP-underlayer interface, where the increased A - B contact area associated with the transition state is minimized, while the infinitely thick films cannot begin healing at an interface. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
引用
收藏
页数:16
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