Experimental definition of constants a deformation potential N- and P-silicon

被引：0

作者：

Scvortcov, AA ^{[1
]}

Litvinenko, OV ^{[1
]}

机构：

[1] Ulyanovsk State Univ, Ulyanovks, Russia

来源：

APEDE'2002: FIFTH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRON DEVICES ENGINEERING | 2002年

关键词：

D O I：

10.1109/APEDE.2002.1044938

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

At deformation of semiconducting chips the deformation change of energy charge carriers is determined by value. constants of a deformation potential. These constants play an essential role in the description of kinetic effects, but the finding of their numerical. values introduces considerable difficulties and frequently has evaluation nature. Therefore given activity is dedicated to experimental definition of some constants of a deformation potential in single-crystal silicon.

引用

页码：255 / 257

页数：3

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