Morphology and atomic structure of hydrogen-terminated Si(110)-(1 x 1) surfaces prepared by a wet chemical process

被引:5
|
作者
Matsushita, Stephane Yu [1 ]
Kawamoto, Erina [1 ]
Haga, Kenya [1 ]
Yamada, Taro [2 ]
Suto, Shozo [1 ]
机构
[1] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 980857, Japan
[2] RIKEN, Wako, Saitama 3510198, Japan
关键词
Si(110); Etching; STM; LEED; HREELS; Anisotropy; REFLECTANCE ANISOTROPY; AQUEOUS NH4F; SILICON; PHONONS; CMOS;
D O I
10.1016/j.susc.2014.10.003
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have measured the macroscopic and microscopic surface morphology of hydrogen-terminated Si(110)-(1 x 1) [H:Si(110)-(1 x 1)] surfaces prepared by an improved wet chemical process. The observations were performed by high-resolution electron-energy-loss spectroscopy (HREELS), low-energy-electron diffraction (LEED), and scanning tunneling microscopy (STM). At macroscopic scale, it was found that the surface is a mono-hydride terminated surface with a two-dimensional p2mg space group, thus, being a well-defined H:Si(110)-(1 x 1) surface. At microscopic scale, elongated terraces were observed along the [1 (1) over bar0] direction reflecting surface anisotropy. The terraces extend in frames with sizes up to a few micrometers. We discussed the macroscopic and microscopic surface morphology by combining our LEED and STM results. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:135 / 141
页数:7
相关论文
共 50 条
  • [21] Scanning tunneling microscopy study of hydrogen-terminated Si(001) surfaces after wet cleaning
    Arima, K
    Endo, K
    Kataoka, T
    Oshikane, Y
    Inoue, H
    Mori, Y
    SURFACE SCIENCE, 2000, 446 (1-2) : 128 - 136
  • [22] Surface phonons of hydrogen-terminated semiconductor surfaces. I. The H:Si(111)-(1x1) surface
    Sandfort, B.
    Mazur, A.
    Pollmann, J.
    Physical Review B: Condensed Matter, 1995, 516
  • [23] 1-Octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping
    Vuillaume, D. (vuiliaume@isen.iemn.univ-lille1.fr), 1600, American Institute of Physics Inc. (96):
  • [24] Charge Transfer and Molecular Orientation of Tetrafluoro-tetracyanoquinodimethane on a Hydrogen-Terminated Si(111) Surface Prepared by a Wet Chemical Method
    Furuhashi, Masayuki
    Yoshinobu, Jun
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2010, 1 (10): : 1655 - 1659
  • [25] 1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping
    Miramond, C
    Vuillaume, D
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (03) : 1529 - 1536
  • [26] Wet preparation of atomic-scale defect-free hydrogen-terminated Si water surface
    Takahagi, T
    Shingubara, S
    Sakaue, H
    CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING, 2000, 99 (36): : 84 - 93
  • [27] Evolution of two-dimensional structure phase transitions (3 x 1) → (2 x 1) and (1 x 1) → (2 x 1) on hydrogen-terminated Si(100) surface
    Ferng, SS
    Lin, CT
    Yang, KM
    Hsieh, MF
    Lin, DS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3B): : 2197 - 2199
  • [28] Changes in Minority Carrier Lifetime of Hydrogen-Terminated Si Surfaces in Dry- and Wet-Air
    Corpuz, Franco F., Jr.
    Matsumoto, Taketoshi
    Kim, Woo-Byoun
    Kobayashi, Hikaru
    ECS SOLID STATE LETTERS, 2012, 1 (06) : P89 - P91
  • [29] Electronic structures of dangling-bond structures fabricated on hydrogen-terminated Si(100)-2x1 surfaces
    Hitosugi, T
    Hashizume, T
    Heike, S
    Kajiyama, H
    Wada, Y
    Watanabe, S
    Hasegawa, T
    Kitazawa, K
    DEFECT AND DIFFUSION FORUM, 1998, 162 : 43 - 57
  • [30] Growth and structure of Fe, Co and Ni films on hydrogen-terminated Si(111) surfaces
    Gruyters, M
    SURFACE SCIENCE, 2002, 515 (01) : 53 - 60