Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires

被引：3
|
作者：
Liu, Shu-man [1 ]
Yoshita, Masahiro
Okano, Makoto
Ihara, Toshiyuki
Itoh, Hirotake
Akiyama, Hidefumi
Pfeiffer, Loren
West, Ken
Baldwin, Kirk
机构：
[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[2] Japan Sci & Technol Agcy, CREST, Kashiwa, Chiba 2778581, Japan
[3] Alcatel Lucent, Bell Labs, Murray Hill, NJ 07974 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 12-16期
关键词：
low threshold; single mode; quantum-wire laser; cleaved-edge overgrowth; current injection;
D O I：
10.1143/JJAP.46.L330
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A one-dimensional active region consisting of 20-period T-shaped GaAs/AlGaAs quantum wires of 14x6nm(2) combined with a well-defined current-confinement scheme has been utilized to obtain a low-threshold-current high-efficiency laser. A threshold current as low as 0.27 mA, a single-mode cw output power of 0.13 mW at 1 mA injection current, and a differential quantum efficiency of 12% were achieved at 30 K using a quantum-wire laser with a 500-mu m-long Fabry-Perot cavity coated by high-reflectivity thin metals.
引用
收藏
页码：L330 / L332
页数：3
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