Hybrid III-V Lasers on Silicon

被引：0

作者：

Olivier, S. ^{[1
]}

Malhouitre, S. ^{[1
]}

Kopp, C. ^{[1
]}

Ben Bakir, B. ^{[1
]}

Descos, A. ^{[1
]}

Bordel, D. ^{[1
]}

Menezo, S. ^{[1
]}

Fedeli, J. -M. ^{[1
]}

Duan, G. -H. ^{[2
]}

Kaspar, P. ^{[2
]}

Jany, C. ^{[2
]}

Le liepvre, A. ^{[2
]}

Accard, A. ^{[2
]}

Make, D. ^{[2
]}

Girard, N. ^{[2
]}

Levaufre, G. ^{[2
]}

Shen, A. ^{[2
]}

Charbonnier, P. ^{[2
]}

Mallecot, F. ^{[2
]}

Lelarge, F. ^{[2
]}

Gentner, J. -L. ^{[2
]}

机构：

[1] CEA Grenoble, Leti, F-38054 Grenoble, France

[2] III V Lab, Palaiseau, France

来源：

2014 IEEE PHOTONICS CONFERENCE (IPC) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We used the molecular wafer bonding technique to develop a hybrid widely tunable, monomode IIIV/Si laser for wavelength division multiplexing, with a tunability over 35 nm and an output power in excess of 3 mW.

引用

页码：256 / 257

页数：2

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