Topological phases in N-layer ABC graphene/boron nitride moire superlattices

被引:9
|
作者
Galeano Gonzalez, David Andres [1 ,2 ]
Chittari, Bheema Lingam [3 ]
Park, Youngju [2 ]
Sun, Jin-Hua [4 ]
Jung, Jeil [2 ,5 ]
机构
[1] Univ Antioquia, Inst Fis, AA 1226, Medellin, Colombia
[2] Univ Seoul, Dept Phys, Seoul 02504, South Korea
[3] Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Mohanpur 741246, W Bengal, India
[4] Ningbo Univ, Res Inst Adv Technol, Ningbo 315211, Zhejiang, Peoples R China
[5] Univ Seoul, Dept Smart Cities, Seoul 02504, South Korea
基金
新加坡国家研究基金会;
关键词
BILAYER; SUPERCONDUCTIVITY; INSULATOR; VALLEY; SPIN; MONOLAYER; BEHAVIOR; BANDS;
D O I
10.1103/PhysRevB.103.165112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Rhombohedral N = 3 trilayer graphene on hexagonal boron nitride hosts gate-tunable, valley-contrasting, nearly flat topological bands that can trigger spontaneous quantum Hall phases under appropriate conditions of the valley and spin polarization. Recent experiments have shown signatures of C = 2 valley Chern bands at 1/4 hole filling, in contrast to the predicted value of C = 3. We discuss the low-energy model for rhombohedral N-layer graphene (N = 1, 2, 3) aligned with hexagonal boron nitride subject to off-diagonal moire vector potential terms that can alter the valley Chern numbers. Our analysis suggests that topological phase transitions of the flatbands can be triggered by pseudomagnetic vector field potentials associated to moire strain patterns, and that a nematic order with broken rotational symmetry can lead to valley Chern numbers that are in agreement with recent Hall conductivity observations.
引用
收藏
页数:8
相关论文
共 50 条
  • [31] Moire band model and band gaps of graphene on hexagonal boron nitride
    Jung, Jeil
    Laksono, Evan
    DaSilva, Ashley M.
    MacDonald, Allan H.
    Mucha-Kruczynski, Marcin
    Adam, Shaffique
    PHYSICAL REVIEW B, 2017, 96 (08)
  • [32] Electronic properties of graphene/hexagonal-boron-nitride moire superlattice
    Moon, Pilkyung
    Koshino, Mikito
    PHYSICAL REVIEW B, 2014, 90 (15):
  • [33] Layer-Dependent Electromechanical Response in Twisted Graphene Moire Superlattices
    Zhang, Hanhao
    Wei, Yuanhao
    Li, Yuhao
    Lin, Shengsheng
    Wang, Jiarui
    Taniguchi, Takashi
    Watanabe, Kenji
    Li, Jiangyu
    Shi, Yi
    Wang, Xinran
    Shi, Yan
    Fei, Zaiyao
    ACS NANO, 2024, 18 (27) : 17570 - 17577
  • [34] Plasmon modes in N-layer graphene structures at zero temperature
    Phuong Dong Thi Kim
    Men Nguyen Van
    JOURNAL OF LOW TEMPERATURE PHYSICS, 2020, 201 (3-4) : 311 - 320
  • [35] Plasmon modes in N-layer graphene structures at zero temperature
    Phuong Dong Thi Kim
    Men Nguyen Van
    Journal of Low Temperature Physics, 2020, 201 : 311 - 320
  • [36] The dimensionality effect on phonon localization in graphene/hexagonal boron nitride superlattices
    Ma, Tengfei
    Lin, Cheng-Te
    Wang, Yan
    2D MATERIALS, 2020, 7 (03):
  • [37] Tuning of the moire bands in graphene on hexagonal boron nitride by the periodic electrostatic gating
    Lin, Xianqing
    Su, Kelu
    Ni, Jun
    2D MATERIALS, 2023, 10 (03)
  • [38] Phonon transport on two-dimensional graphene/boron nitride superlattices
    Zhu, Taishan
    Ertekin, Elif
    PHYSICAL REVIEW B, 2014, 90 (19)
  • [39] Graphene on boron-nitride: Moire pattern in the van der Waals energy
    Neek-Amal, M.
    Peeters, F. M.
    APPLIED PHYSICS LETTERS, 2014, 104 (04)
  • [40] Commensurate and incommensurate double moire interference in graphene encapsulated by hexagonal boron nitride
    Leconte, N.
    Jung, J.
    2D MATERIALS, 2020, 7 (03)