Deciphering the vibrational spectrum of interstitial H2 in si

被引:0
|
作者
Stavola, M [1 ]
Chen, EE [1 ]
Fowler, WB [1 ]
机构
[1] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA
来源
HYDROGEN IN SEMICONDUCTORS | 2004年 / 813卷
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中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
H-2 is a fascinating molecule whose properties revealed the influence of nuclear spin on the molecular wave function in the 1920s. As an interstitial defect in Si, the H-2 molecule has given rise to a number of perplexing puzzles since the discovery of its vibrational spectrum. The absence of an ortho-para splitting for the H-2 vibrational line and an apparent low symmetry found in stress experiments misled several researchers into thinking that interstitial H-2 in Si must have a barrier to rotation. Our discovery of a new vibrational line for HD in Si and its interpretation, along with the recognition that certain transitions are possible for HD, but not for H-2 or D-2, establish that H-2 in Si is a nearly free rotator after all. Additional puzzles such as the anomalous intensity of the HD line, the absence of an isotope dependence for the uniaxial stress splitting of the H-2 and D-2 vibrational lines, and the properties of an O-H-2 complex are also explained naturally. Recent Raman studies confirm that interstitial H-2 in Si is a free rotator but raise interesting new questions about the diffusivities of the ortho and para species.
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页码:15 / 25
页数:11
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