Atomic Force Microscopy Measurement of the Resistivity of Semiconductors

被引：5
|
作者：
Smirnov, V. A. [1 ]
Tominov, R. V. [1 ]
Alyab'eva, N. I. [2 ]
Il'ina, M. V. [1 ]
Polyakova, V. V. [1 ]
Bykov, Al. V. [1 ]
Ageev, O. A. [1 ]
机构：
[1] Southern Fed Univ, Inst Nanotechnol Elect & Equipment Engn, Taganrog 347922, Russia
[2] Univ Paris 11, Orsay, France
来源：
TECHNICAL PHYSICS | 2018年 / 63卷 / 08期
基金：
俄罗斯基础研究基金会;
关键词：
LOCAL ANODIC-OXIDATION; OXIDE STRUCTURES;
D O I：
10.1134/S1063784218080182
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed based on these data. It has been shown that the resistivity of silicon can be determined reliably if the force with which the probe is pressed against the substrate exceeds some threshold. The influence of the environment on the values of currents in the probe-substrate system has been studied. It has been found that the electrical performance of semiconductors can be properly determined by atomic force microscopy spreading resistance imaging under high-vacuum conditions.
引用
收藏
页码：1236 / 1241
页数：6
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