Shapiro steps observed in a superconducting single electron transistor

被引：0
|
作者：
Liou, Saxon [1 ]
Kuo, Watson
Suen, Y. W.
Hsieh, W. H.
Wu, C. S.
Chen, C. D.
机构：
[1] Natl Chung Hsing Univ, Dept Phys, Taichung 402, Taiwan
[2] Acad Sinica, Inst Phys, Nankang 115, Taiwan
来源：
CHINESE JOURNAL OF PHYSICS | 2007年 / 45卷 / 02期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The dc current-voltage (IV) characteristics of a superconducting single electron transistor irradiated with microwaves up to 18 GHz are experimentally studied. The switching current as a function of gate voltage demonstrates clear phase-charge duality in a Josephson junction. At higher microwave power levels, Shapiro steps in IV characteristics are observed. The step height in IV can be analyzed using the model an ac-voltage source applied to a single Josephson junction.
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页码：230 / 236
页数：7
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