High carrier mobility in polycrystalline thin film diamond

被引：106
|
作者：
Looi, HJ
Jackman, RB
Foord, JS
机构：
[1] Univ London Univ Coll, London WC1E 7JE, England
[2] Univ Oxford, Phys Chem Lab, Oxford OX1 3QZ, England
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 03期
关键词：
D O I：
10.1063/1.120734
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polycrystalline diamond films have been found to display p-type surface conductivity. No bulk impurity is added to the films; the p-type characteristics of the undoped diamond are thought to be due to a surface or near surface hydrogenated layer. Carrier concentrations within the range 10(17)-10(19) cm(-3) have been measured; control over the carrier concentration can be achieved by annealing the "as-grown" films in air. For a given annealing temperature a stable carrier concentration arises. The Hall carrier mobility has been explored and a value of >70 cm(2)/Vs has been measured for a film with a carrier concentration of similar to 5 x 10(17) cm(-3), the highest reported for polycrystalline thin film diamond and equivalent to boron doped single crystal diamond. (C) 1998 American Institute of Physics.
引用
收藏
页码：353 / 355
页数：3
相关论文
共 50 条
  • [41] Polycrystalline diamond for optical thin films
    Mueller-Sebert, W.
    Wild, Ch.
    Koidl, P.
    Herres, N.
    Wagner, J.
    Eckermann, T.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1992, B11 (1-4): : 173 - 178
  • [42] High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond
    Looi, HJ
    Pang, LYS
    Wang, Y
    Whitfield, MD
    Jackman, RB
    DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) : 565 - 568
  • [43] Standard electrochemical behavior of high-quality, boron-doped polycrystalline diamond thin-film electrodes
    Granger, MC
    Witek, M
    Xu, JS
    Wang, J
    Hupert, M
    Hanks, A
    Koppang, MD
    Butler, JE
    Lucazeau, G
    Mermoux, M
    Strojek, JW
    Swain, GM
    ANALYTICAL CHEMISTRY, 2000, 72 (16) : 3793 - 3804
  • [44] Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs
    Zhou, Yan
    Ramaneti, Rajesh
    Anaya, Julian
    Korneychuk, Svetlana
    Derluyn, Joff
    Sun, Huarui
    Pomeroy, James
    Verbeeck, Johan
    Haenen, Ken
    Kuball, Martin
    APPLIED PHYSICS LETTERS, 2017, 111 (04)
  • [45] THE ELECTROCHEMICAL ACTIVITY OF BORON-DOPED POLYCRYSTALLINE DIAMOND THIN-FILM ELECTRODES
    SWAIN, GM
    RAMESHAM, R
    ANALYTICAL CHEMISTRY, 1993, 65 (04) : 345 - 351
  • [46] Property change of polycrystalline diamond thin film due to self-ion irradiation
    Terai, T
    Kobayashi, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 141 (1-4): : 140 - 143
  • [47] Property change of polycrystalline diamond thin film due to self-ion irradiation
    Univ of Tokyo, Tokyo, Japan
    Nucl Instrum Methods Phys Res Sect B, 1-4 (140-143):
  • [48] Polycrystalline diamond thin film as wide bandgap material: the optoelectronic behaviour and the relationship with the structure
    Pereira, L
    Pereira, E
    Rodrigues, A
    Gomes, H
    SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, 2000, : 295 - 298
  • [49] ELECTROCHEMICAL CHARACTERIZATION OF BORON-DOPED POLYCRYSTALLINE DIAMOND THIN-FILM ELECTRODES
    ZHU, PL
    ZHU, JZ
    YANG, SH
    ZHANG, XK
    ZHANG, GX
    FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1995, 353 (02): : 171 - 173
  • [50] Charge Carrier Transport in Polycrystalline Organic Thin Film Based Field Effect Transistors
    Rani, Varsha
    Sharma, Akanksha
    Ghosh, Subhasis
    DAE SOLID STATE PHYSICS SYMPOSIUM 2015, 2016, 1731
12345