Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes

被引：1
|
作者：
Oh, Dohyun [1 ,2 ]
Yun, Dong Yeol [2 ]
Cho, Woon-Jo [1 ]
Kim, Tae Whan [2 ]
机构：
[1] Korea Inst Sci & Technol, Ctr Optoelect Convergence Syst, Seoul 136791, South Korea
[2] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
ROOM-TEMPERATURE; TRANSPARENT; FABRICATION; DIODE;
D O I：
10.7567/JJAP.53.086502
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visibje region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were-enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of. the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics. (C) 2014 The Japan Society of Applied Physics
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页数：3
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