Photoconductivity derived from an exact modelling of the uncompensated one-donor model. II - Computer simulation of the steady-state exact model

被引:1
|
作者
Pillonnet, A
Ongaro, R
Garoum, M
机构
[1] Univ Lyon 1, F-69622 Villeurbanne, France
[2] Ecole Super Technol Sale, Dept Genie Urbain & Environm, Sale Medina, Morocco
来源
关键词
photoconductivity; localised states; modelling; computerising;
D O I
10.1080/10420150008213262
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Stationary photoconductivity is treated with the model of Part I, free from any of the usual simplifying approximations of the related equations. This simulation leads to set forth a new concept of characteristic temperature To, at which the donor population is independent of the illumination intensity G. To separates two intervals of temperature over which G either partially empties (T< T-0) or fills (T> T-0) the level. Also T-0 has, in particular, an influence on the ratio n/p of free electrons and holes. The effective isothermal behaviour of n(G) shows that n(G) alpha G(1/2) on the lower side of the G range, and n(G) alpha G at higher G. Variations of n(T) at constant G also display original, To dependent, characteristics. Finally, a qualitative comparison is made of the 1D model with the two 1D(al) approximate models described in I, in order to distinguish their most prominent behaviour differences.
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页码:335 / 361
页数:27
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