Terahertz heterodyne detection with silicon field-effect transistors

被引：107

作者：

Glaab, Diana ^{[1
]}

Boppel, Sebastian ^{[1
]}

Lisauskas, Alvydas ^{[1
]}

Pfeiffer, Ullrich ^{[2
]}

Oejefors, Erik ^{[2
]}

Roskos, Hartmut G. ^{[1
]}

机构：

[1] Goethe Univ Frankfurt, Inst Phys, D-60438 Frankfurt, Germany

[2] Univ Wuppertal, D-42119 Wuppertal, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期

关键词：

elemental semiconductors; focal planes; heterodyne detection; MOSFET; silicon; terahertz wave imaging; terahertz waves; RADIATION;

D O I：

10.1063/1.3292016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the detection of electromagnetic radiation at 0.65 THz by silicon field-effect transistors operated in heterodyne mode. Aiming at terahertz imaging with numerous pixels in a focal-plane array, we explore the improvement of the dynamic range achieved over power detection when the local-oscillator (LO) power is distributed quasioptically onto all detectors. These consist of resonantly antenna-coupled complementary metal-oxide-semiconductor transistors with a gate length of 0.25 mu m, and each has an integrated voltage amplifier. With a LO power of 2 mu W per detector, the noise-equivalent power amounts to 8 fW/Hz, leading to an estimated improvement of the dynamic range by 29 dB.

引用

页数：3

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