Exciton luminescence of spherical GaAs nanocrystals studied by persistent hole-burning spectroscopy

被引：0
|
作者：
Taniguchi, K [1 ]
Morishige, Y [1 ]
Kanemitsu, Y [1 ]
机构：
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
spherical nanocrystals; persistent luminescence hole-burning; exciton-phonon coupling;
D O I：
10.1016/S1386-9477(02)00778-6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have studied free-exciton photoluminescence (PL) properties of spherical GaAs nanocrystals embedded in SiO2 matrices fabricated by ion-beam synthesis. Under resonant excitation at energies within the free-exciton PL band, LO-phonon structures appear in the PL hole-burning spectra. By deuterium implantation to GaAs nanocrystals, both the impurity-related PL band and the LO-phonon-assisted luminescence disappear. It is concluded that the exciton-LO-phonon coupling in GaAs nanocrystals is enhanced by local electric fields caused by impurities ionization. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：79 / 81
页数：3
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