Fast PEALD ZnO Thin-Film Transistor Circuits

被引:77
|
作者
Mourey, Devin A. [1 ,2 ]
Zhao, Dalong A. [3 ,4 ]
Sun, Jie [3 ,4 ]
Jackson, Thomas N. [3 ,4 ]
机构
[1] Penn State Univ, Dept Mat Sci & Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
[2] Penn State Univ, Dept Mat Sci & Engn, Mat Res Inst, University Pk, PA 16802 USA
[3] Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
[4] Penn State Univ, Dept Elect Engn, Mat Res Inst, University Pk, PA 16802 USA
关键词
Oxide thin-film transistors (TFTs); plasma-enhanced atomic layer deposition (PEALD); thin-film circuits; ZnO;
D O I
10.1109/TED.2009.2037178
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report stable high-mobility ZnO thin-film transistors (TFTs) and fast circuits fabricated using a novel weak reactant plasma-enhanced atomic layer deposition (PEALD) process. This PEALD process is a highly scalable manufacturable process and is a faster and simpler alternative to conventional atomic layer deposition. Using PEALD, we have deposited highly crystalline (002) textured ZnO thin films at a low temperature (200 degrees C). Using PEALD ZnO films, we have fabricated high-mobility TFTs (20-30 cm(2)/V . s), which have < 100-mV threshold voltage shifts after bias stress at 80 degrees C for 20 000 s. Using these high-performance TFTs, we have also fabricated simple 15-stage ring oscillator circuits with a propagation delay of 22 ns/stage for a supply voltage of 16 V, which, to the best of our knowledge, are the fastest ZnO TFT circuits reported to date.
引用
收藏
页码:530 / 534
页数:5
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