Modification of tin dioxide thin films by ion implantation

被引：9
|
作者：
Tao, Z [1 ]
Junda, H [1 ]
Hong, L [1 ]
机构：
[1] Beijing Normal Univ, Beijing Radiat Ctr, Key Lab Univ Radiat Beam Technol & Mat Modificat, Inst Law Energy Nucl Phys, Beijing 100875, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2000年 / 161卷 / 3-4期
关键词：
tin; ion implantation; SnO2;
D O I：
10.1016/S0169-4332(00)00359-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Tin oxide films prepared by sputtering deposition were subjected to W, O implantation and annealing. XRD and XPS were used to characterize the films. The effects of implantation on the phase transform in the films were studied. Deposition by sputtering a SnO2 target at room temperature yields amorphous SnO2. O implantation induces a transform of amorphous SnO2 into crystalline SnO2. W implantation induces SnO formation in the amorphous film. W implanted and then O implanted films show evidence of Sn3O4. W implantation decreases the O:Sn ratio of the phases composed of tin and oxygen in the film while O implantation increases this ratio. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：459 / 464
页数：6
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