Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers

被引：30

作者：

Park, Seoung-Hwan ^{[1
]}

Ahn, Doyeol ^{[2
]}

Koo, Bun-Hei ^{[3
]}

Oh, Jae-Eung ^{[3
,4
]}

机构：

[1] Catholic Univ Daegu, Dept Elect Engn, Kyeongsan 712702, Kyeongbuk, South Korea

[2] Univ Seoul, Dept Elect & Comp Engn, Seoul 130743, South Korea

[3] Wooree LST Corp, Ansan Shi 425833, Kyungki Do, South Korea

[4] Hanyang Univ, Dept Elect & Comp Engn, Ansan 425791, Kyungki Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期

关键词：

effective mass; gallium compounds; III-V semiconductors; indium compounds; semiconductor quantum wells; STRAINED WURTZITE SEMICONDUCTORS; ELECTRONIC-PROPERTIES; BAND DISCONTINUITIES; LASERS; HETEROSTRUCTURES; ALLOYS; GAAS;

D O I：

10.1063/1.3300840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical gain characteristics of type-II InGaN/GaNSb quantum well (QW) structure are investigated by using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The transition wavelength rapidly increases with increasing the Sb composition in GaNSb layer while it is less sensitive to the In composition in InGaN layer. Hence, longer wavelength QW structures with a relatively lower In composition can be easily obtained by controlling Sb composition, compared to the conventional type-I InGaN/GaN QW structures. The optical gain and the differential gain (dg/dn) of a type-II QW structure are shown to be much larger than that of a conventional QW structure in an investigated range of carrier densities. This is due to the reduction in the effective well width, in addition to the increase in the optical matrix element.

引用

页数：3

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