Coupling Effect of the Interfacial Reaction in Co/Sn/Cu Diffusion Couples

被引：15
|
作者：
Wang, Chao-hong [1 ]
Kuo, Chun-yi [1 ]
机构：
[1] Natl Chung Cheng Univ, Dept Chem Engn, Chiayi 62102, Taiwan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 08期
关键词：
Lead-free solders; interfacial reactions; Co; Cu; CROSS-INTERACTION; SOLDER JOINT; CU; BARRIER; GROWTH; LAYER; NI;
D O I：
10.1007/s11664-010-1180-x
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Co/Sn/Cu sandwich couples formed by electroplating were examined to investigate the interaction between Cu and Co across the Sn layer for various Sn thicknesses from 75 mu m to 580 mu m. At the Sn/Cu interface, both Cu(6)Sn(5) and Cu(3)Sn are formed. Unlike in a binary Sn/Cu couple, Cu(6)Sn(5) has a spiked structure for couples with a thinner Sn layer. At the Co/Sn interface, two phases, CoSn(3) and (Cu,Co)(6)Sn(5), were simultaneously observed after reaction at 200A degrees C. Remarkably, the CoSn(3) reaction layer was much thinner than that in the binary Sn/Co couple. Furthermore, only the (Cu,Co)(6)Sn(5) phase was formed at 150A degrees C. This finding indicates that CoSn(3) growth is significantly inhibited in Co/Sn/Cu sandwich couples due to the Cu substrate.
引用
收藏
页码：1303 / 1308
页数：6
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