High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm

被引：0
|
作者：
Graham, D. M. [1 ]
Dawson, P. [2 ]
Zhu, D. [1 ]
Kappers, M. J. [1 ]
McAleese, C. [1 ]
Hylton, N. P.
Chabro, G. R.
Humphreys, C. J.
机构：
[1] Univ Cambridge, Dept Mat Sci & Metallurgy, Cambridge CB2 1TN, England
[2] Univ Manchester, Manchester M13 9PL, Lancs, England
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
photoluminescence; indium gallium nitride; UV emission;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we show that by using InxGa1-xN/AHnGaN quantum wells, with values of x of 0.08 and narrow quantum wells in the range 2.4 to 1.5 nm, it is possible to achieve very high room temperature photoluminescence quantum efficiencies. The key factors in the design are high barriers, exciton localization and a fast radiative recombination rate. Specifically the structure with the well width of 1.5 ran has a measured efficiency of 0.63.
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页码：347 / +
页数：2
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