Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

被引：2

作者：

Huang, L ^{[1
]}

Lai, PT ^{[1
]}

Xu, JP ^{[1
]}

Cheng, YC ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong

来源：

1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 1997年

关键词：

D O I：

10.1109/HKEDM.1997.642340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible far GIDL.

引用

页码：94 / 97

页数：4

共 50 条

[1] Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET
Huang, L
Lai, PT
Xu, JP
Cheng, YC
[J]. MICROELECTRONICS AND RELIABILITY, 1998, 38 (09): : 1425 - 1431
[2] Effect of OFF-State Stress on Gate-Induced Drain Leakage by Interface Traps in Buried-Gate FETs
Lee, Geon-Beom
Kim, Choong-Ki
Yoo, Min-Soo
Hur, Jae
Choi, Yang-Kyu
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (12) : 5126 - 5132
[3] Analysis of a novel elevated source drain MOSFET with-induced gate-induced drain-leakage current
Kim, KW
Choi, CS
Choi, WY
[J]. 2000 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 2000, : 36 - 39
[4] Off-state leakage in MOSFET considering source/drain extension regions
Hur, Jae
Jeong, Woo Jin
Shin, Mincheol
Choi, Yang-Kyu
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (08)
[5] Gate Leakage Power Analysis for a Nanoscale N-MOSFET
Kumar, Ashwani
Dasgupta, S.
[J]. JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2008, 5 (11) : 2180 - 2185
[6] GATE CURRENT IN OFF-STATE MOSFET
CHEN, J
CHAN, TY
KO, PK
HU, CM
[J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) : 203 - 205
[7] Study of the off-state leakage current in silicon-on-insulator (SOI) n-MOSFET for RF circuit design
Soin, Norhayati
Saad, Norazian Mat
[J]. CURRENT ISSUES OF PHYSICS IN MALAYSIA, 2008, 1017 : 193 - 198
[8] Gate-induced drain leakage current characteristics of p-type polycrystalline silicon thin film transistors aged by off-state stress
Park, J.
Jang, K. S.
Shin, D. G.
Shin, M.
Yi, J. S.
[J]. SOLID-STATE ELECTRONICS, 2018, 148 : 20 - 26
[9] Temperature and drain voltage dependence of gate-induced drain leakage
Lopez, L
Masson, P
Née, D
Bouchakour, R
[J]. MICROELECTRONIC ENGINEERING, 2004, 72 (1-4) : 101 - 105
[10] Gate-Induced Drain Leakage in Negative Capacitance FinFETs
Gaidhane, Amol D.
Pahwa, Girish
Verma, Amit
Chauhan, Yogesh Singh
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (03) : 802 - 809

← 1 2 3 4 5 →