The dark current mechanism of HgCdTe photovoltaic detector passivated by different structure

被引：0
|
作者：
Sun, T [1 ]
Li, YJ [1 ]
Guo, CX [1 ]
Hu, XN [1 ]
He, L [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Res Ctr Adv Mat & Devices, Shanghai 200083, Peoples R China
来源：
INFRARED COMPONENTS AND THEIR APPLICATIONS | 2005年 / 5640卷
关键词：
HgCdTe photovoltaic detector; passivation; reciprocal space map; dark current; ON-P JUNCTIONS; 1/F NOISE;
D O I：
10.1117/12.571918
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The HgCdTe photovoltaic detectors passivated by single ZnS layer and dual (CdTe+ZnS) layers were fabricated in same wafer. The fabricated devices were characterized by measurements of the diode dark IN characteristics and low-frequency noise. The dual-layer passivated diodes showed the better performance compared to the single layer passivated diodes, and modeling of diode dark current mechanisms indicated that the performance of the diodes passivated by single ZnS were found to be strongly affected by tunneling current related to the surface defects, By the analysis of X-ray reciprocal space maps, It was found the Q(y) scan direction broadening of HgCdTe epitaxial layer passivated by ZnS was wider after passivation, which confirmed the existence of defects in the surface of HgCdTe epitaxial layer passivated by ZnS.
引用
收藏
页码：26 / 33
页数：8
相关论文
共 50 条
  • [31] Current status and technology of the HgCdTe IR detector in Korea
    Kim, JM
    Lee, HC
    Suh, SH
    INFRARED TECHNOLOGY AND APPLICATIONS XXIV, PTS 1-2, 1998, 3436 : 24 - 33
  • [32] Effect of Dislocations on Dark Current in LWIR HgCdTe Photodiodes
    Bacon, Candice M.
    McMurtry, Craig W.
    Pipher, Judith L.
    Mainzer, Amanda
    Forrest, William
    HIGH ENERGY, OPTICAL, AND INFRARED DETECTORS FOR ASTRONOMY IV, 2010, 7742
  • [33] A model for dark current and multiplication in HgCdTe avalanche photodiodes
    S. Velicu
    R. Ashokan
    S. Sivananthan
    Journal of Electronic Materials, 2000, 29 : 823 - 827
  • [34] A model for dark current and multiplication in HgCdTe avalanche photodiodes
    Velicu, S
    Ashokan, R
    Sivananthan, S
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (06) : 823 - 827
  • [35] Dark Current Evolution in Irradiated MWIR HgCdTe Photodiodes
    Dinand, S.
    Gravrand, O.
    Baier, N.
    De Borniol, E.
    Rochette, F.
    Rizzolo, S.
    Saint-Pe, O.
    Goiffon, V.
    JOURNAL OF ELECTRONIC MATERIALS, 2023, 52 (11) : 7103 - 7113
  • [36] Numerical simulation of passivated long-wave IR HgCdTe surfaces and their effect on detector performance
    Prigozhin, Ilya
    Glasmann, Andreu
    Bellotti, Enrico
    INFRARED TECHNOLOGY AND APPLICATIONS XLIV, 2018, 10624
  • [37] Study on the structure characteristics of HgCdTe infrared detector using laser beam-induced current
    Hong, X. K.
    Lu, H.
    Zhang, D. B.
    2012 12TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), 2012, : 71 - 72
  • [38] Analysis of dark current generated by long-wave infrared HgCdTe photodiodes with different implantation shapes
    Cui Ailiang
    Liu Lingfeng
    Sun Changhong
    Ding Ruijun
    He Li
    Ye Zhenhua
    INFRARED PHYSICS & TECHNOLOGY, 2019, 103
  • [39] DARK CURRENT PROCESSES IN THINNED P-TYPE HGCDTE
    BLANKS, DK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1764 - 1769
  • [40] Numerical analysis of two-color HgCdTe infrared photovoltaic heterostructure detector
    Hu, W. D.
    Chen, X. S.
    Ye, Z. H.
    Lin, C.
    Yin, F.
    Lu, W.
    OPTICAL AND QUANTUM ELECTRONICS, 2009, 41 (09) : 699 - 704
12345