ZEP520A-A resist for electron-beam grayscale lithography and thermal reflow

被引:34
|
作者
Kirchner, R. [1 ]
Guzenko, V. A. [1 ]
Vartiainen, I. [1 ,2 ]
Chidambaram, N. [1 ]
Schift, H. [1 ]
机构
[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland
[2] Univ Eastern Finland, Inst Photon, Joensuu 80101, Finland
关键词
Sensitivity; Contrast; Sidewall inclination; Energy optimization; Thermoplastic; Visco-elasticity; Polymer; FABRICATION; MICROSTRUCTURES; NANOFABRICATION; SML;
D O I
10.1016/j.mee.2016.01.017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The usability of ZEP520A as resist for thermally activated selective topography equilibration (TASTE) was investigated. It was found that (i) a high-contrast resist such as ZEP520A is well suitable for grayscale electron-beam lithography, (ii) a selective thermal reflow is possible with ZEP520A and (iii) reflow is governed by the same energy minimization principle as known from poly (methyl methacrylate) (PMMA), another linear thermoplastic resist. The high contrast of ZEP520A does not play a role for the step-to-step sidewall angle as this is only governed by the design of the step. ZEP520A and similar positive tone resists on the market provide the same reflow-feature variety as PMMA including stable and unstable, concave and convex, arbitrary stepped and sloped features as well as combinations of all these features. The advantage of ZEP520A is a reduced writing time due to its high sensitivity. Finally, the transfer of the reflow process to structures being much smaller than typical TASTE structures so far was demonstrated. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:71 / 76
页数:6
相关论文
共 50 条
  • [21] Accurate control of remaining resist depth for nanoscale three-dimensional structures in electron-beam grayscale lithography
    Lee, S. -Y.
    Anbumony, K.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (06): : 2008 - 2012
  • [22] Controlling resist thickness and etch depth for fabrication of 3D structures in electron-beam grayscale lithography
    Kim, J.
    Joy, D. C.
    Lee, S. -Y.
    MICROELECTRONIC ENGINEERING, 2007, 84 (12) : 2859 - 2864
  • [23] THERMAL EFFECTS IN ELECTRON-BEAM LITHOGRAPHY
    MULDER, EH
    VANDERMAST, KD
    ENTERS, AC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1552 - 1555
  • [24] BILEVEL POLYSILOXANE RESIST FOR ION-BEAM AND ELECTRON-BEAM LITHOGRAPHY
    BRAULT, RG
    KUBENA, RL
    METZGER, RA
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 539 : 70 - 73
  • [25] Electron-Beam Induced Shrinkage Effects on Line-Space Patterns of ZEP Resist
    Dinh, Cong Que
    Oshima, Akihiro
    Nishijima, Shigehiro
    Tagawa, Seiichi
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2016, 29 (01) : 81 - 89
  • [26] NEW CHEMICALLY AMPLIFIED POSITIVE RESIST FOR ELECTRON-BEAM LITHOGRAPHY
    HASHIMOTO, K
    KATSUYAMA, A
    ENDO, M
    SASAGO, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (01): : 37 - 43
  • [27] COMPUTER-SIMULATION OF RESIST HEATING IN ELECTRON-BEAM LITHOGRAPHY
    CUI, Z
    CLEAVER, JRA
    AHMED, H
    MICROELECTRONIC ENGINEERING, 1992, 17 (1-4) : 395 - 398
  • [28] Resist processes for hybrid (electron-beam deep ultraviolet) lithography
    Tedesco, S
    Mourier, T
    Dal'zotto, B
    McDougall, A
    Blanc-Coquant, S
    Quéré, Y
    Paniez, PJ
    Mortini, B
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3676 - 3683
  • [29] Resist processes for low-energy electron-beam lithography
    Schock, KD
    Prins, FE
    Strahle, S
    Kern, DP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06): : 2323 - 2326
  • [30] Polycarbonate as a negative-tone resist for electron-beam lithography
    Zheng, Nan
    Min, Haodi
    Jiang, Youwei
    Cheng, Xing
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (02):