Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPE

被引：2
|
作者：
Kangawa, Y
Kawaguchi, N
Kumagai, Y
Koukitua, A
机构：
[1] Tokyo Univ Agr & Technol, Dept Appl Chem, Tokyo 1848588, Japan
[2] Ishikawajima Harima Heavy Ind Co Ltd, Tech Dev & Engn Ctr, Yokohama, Kanagawa 2358501, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期
关键词：
metalorganic vapor phase epitaxy; nitrides;
D O I：
10.1016/j.jcrysgro.2004.08.095
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We carried out Nd:YAG pulse laser-assisted metalorganic vapor-phase epitaxy (LMOVPE) of InGaN at low temperatures in order to obtain films with high indium content. The results suggest that the reaction rate between group-III source gas and ammonia is enhanced by the pulse laser irradiation. Moreover, it is found that pulse laser may enhance the surface migration of the elements, and crystalline quality becomes good. These results imply that LMOVPE using Nd:YAG pulse laser is useful for the low-temperature growth of InGaN. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：444 / 448
页数：5
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