Enhancement-and depletion-mode GaAs MESFETs grown by laser-assisted MOVPE

被引:0
|
作者
机构
[1] Ban, Yuzaburoh
[2] Ishizaki, Mamoru
[3] Asaka, Tatsuya
[4] Koyama, Yoshihisa
[5] Kukimoto, Hiroshi
来源
Ban, Yuzaburoh | 1600年 / 28期
关键词
Transistors; Field Effect;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] ENHANCEMENT-MODE AND DEPLETION-MODE GAAS-MESFETS GROWN BY LASER-ASSISTED MOVPE
    BAN, Y
    ISHIZAKI, M
    ASAKA, T
    KOYAMA, Y
    KUKIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1899 - L1901
  • [2] GAAS P-N-JUNCTION AND DOPING SUPERLATTICES GROWN BY LASER-ASSISTED MOVPE
    BAN, Y
    ISHIZAKI, M
    ASAKA, T
    KOYAMA, Y
    KUKIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1995 - L1998
  • [3] A SPICE MODEL FOR ENHANCEMENT-MODE AND DEPLETION-MODE GAAS-FETS
    SUSSMANFORT, SE
    HANTGAN, JC
    HUANG, FL
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1986, 34 (11) : 1115 - 1119
  • [4] DEPLETION-MODE GAAS MOS FET
    LILE, DL
    CLAWSON, AR
    COLLINS, DA
    APPLIED PHYSICS LETTERS, 1976, 29 (03) : 207 - 208
  • [5] Fluorination-Enabled Monolithic Integration of Enhancement-and Depletion-Mode Indium-Gallium-Zinc Oxide TFTs
    Feng, Zhuoqun
    Lu, Lei
    Wang, Sisi
    Li, Jiapeng
    Xia, Zhihe
    Kwok, Hoi Sing
    Wong, Man
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (05) : 692 - 695
  • [6] Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate
    Wu, JY
    Wang, HH
    Sze, PW
    Wang, YH
    Houng, MP
    2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 149 - 154
  • [7] CAPACITOR COUPLING OF GAAS DEPLETION-MODE FETS
    LIVINGSTONE, AW
    MELLOR, PJT
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (05): : 297 - 300
  • [8] SELECTIVE AREA CONTROL OF MATERIAL PROPERTIES IN LASER-ASSISTED MOVPE OF GAAS AND ALGAAS
    KUKIMOTO, H
    BAN, Y
    KOMATSU, H
    TAKECHI, M
    ISHIZAKI, M
    JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 223 - 228
  • [9] Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications
    Tsai, MK
    Tan, SW
    Wu, YW
    Lour, WS
    Yang, YJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (02) : 156 - 160
  • [10] Enhancement- and depletion-mode InGaP/InGaAs pHEMTs on 6-inch GaAs substrate
    Chiu, Hsien-Chin
    Cheng, Chia-Shih
    Shih, Yuan-Jui
    Wu, Chan-Shin
    2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, : 1007 - 1010