Heterogeneously integrated III-V/silicon dual-mode distributed feedback laser array for terahertz generation

被引：13
|
作者：
Shao, Haifeng [1 ,2 ]
Keyvaninia, Shahram [1 ]
Vanwolleghem, Mathias [3 ]
Ducournau, Guillaume [3 ]
Jiang, Xiaoqing [2 ]
Morthier, Geert [1 ]
Lampin, Jean-Francois [3 ]
Roelkens, Gunther [1 ]
机构：
[1] Univ Ghent, IMEC, INTEC Dept, Photon Res Grp, B-9000 Ghent, Belgium
[2] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China
[3] Univ Lille 1, CNRS 8520, IEMN, Terahertz Photon Grp, F-59652 Villeneuve Dascq, France
来源：
OPTICS LETTERS | 2014年 / 39卷 / 22期
关键词：
SEMICONDUCTOR-LASER; MU-M; THZ; PHOTOMIXER; PHOTONICS; RADIATION;
D O I：
10.1364/OL.39.006403
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate an integrated distributed feedback (DFB) laser array as a dual-wavelength source for narrowband terahertz (THz) generation. The laser array is composed of four heterogeneously integrated III-V-on-silicon DFB lasers with different lengths enabling dual-mode lasing tolerant to process variations, bias fluctuations, and ambient temperature variations. By optical heterodyning the two modes emitted by the dual-wavelength DFB laser in the laser array using a THz photomixer composed of an uni-traveling carrier photodiode (UTC-PD), a narrow and stable carrier signal with a frequency of 0.357 THz is generated. The central operating frequency and the emitted terahertz wave linewidth are analyzed, along with their dependency on the bias current applied to the laser diode and ambient temperature. (C) 2014 Optical Society of America
引用
收藏
页码：6403 / 6406
页数：4
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