Heterogeneously integrated III-V/silicon distributed feedback lasers

被引：88

作者：

Keyvaninia, S. ^{[1
,2
]}

Verstuyft, S. ^{[1
,2
]}

Van Landschoot, L. ^{[1
,2
]}

Lelarge, F. ^{[3
]}

Duan, G-H ^{[3
]}

Messaoudene, S. ^{[4
]}

Fedeli, J. M. ^{[4
]}

De Vries, T. ^{[5
]}

Smalbrugge, B. ^{[5
]}

Geluk, E. J. ^{[5
]}

Bolk, J. ^{[5
]}

Smit, M. ^{[5
]}

Morthier, G. ^{[1
,2
]}

Van Thourhout, D. ^{[1
,2
]}

Roelkens, G. ^{[1
,2
,5
]}

机构：

[1] Univ Ghent, INTEC, Photon Res Grp, IMEC, B-9000 Ghent, Belgium

[2] Ctr Nano & Biophoton NB Photon, Ghent, Belgium

[3] III V Lab, F-91767 Palaiseau, France

[4] Minatec, CEA Leti, LETI, F-38054 Grenoble 9, France

[5] Eindhoven Univ Technol, Photon Integrat Grp, NL-5600 MB Eindhoven, Netherlands

来源：

OPTICS LETTERS | 2013年 / 38卷 / 24期

关键词：

D O I：

10.1364/OL.38.005434

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60 degrees C around 1550 nm is obtained. (C) 2013 Optical Society of America

引用

页码：5434 / 5437

页数：4

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