Structural Change by Annealing Process at Σ9 Grain Boundaries in Multicrystalline Silicon Substrate for Solar Cells

被引：2
|
作者：
Tachibana, Tomihisa [1 ]
Masuda, Junichi [1 ]
Ogura, Atsushi [1 ]
Ohshita, Yoshio [2 ]
Arafune, Koji [3 ]
机构：
[1] Meiji Univ, Sch Sci & Technol, Kawasaki, Kanagawa 2148571, Japan
[2] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan
[3] Univ Hyogo, Kakogawa, Hyogo 6712280, Japan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 07期
关键词：
ELECTRICAL-ACTIVITY; CRYSTALLIZATION; SI; NICKEL;
D O I：
10.1149/1.3423445
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Sigma 9 grain boundaries (Sigma 9 GBs) in the multicrystalline silicon substrates with and without annealing process were characterized by micro X-ray fluorescence, transmission electron microscopy (TEM) observation, and UV-Raman spectroscopy mapping. The Ni aggregations appeared at some Sigma 9 GBs only after annealing. The differences in the characteristics of GBs with and without annealing were evaluated. Clear structure changes were observed by TEM evaluation for the corresponding Sigma 9 GBs after annealing. At the same Sigma 9 GBs, the stress concentration was observed without an annealing process and disappeared with one. We consider that the Ni aggregation was enhanced by stress accumulation and silicide accelerated the atomic rearrangement at the Sigma 9 GBs. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3423445] All rights reserved.
引用
收藏
页码：B79 / B82
页数：4
相关论文
共 50 条
  • [31] MULTICRYSTALLINE SILICON FOR SOLAR-CELLS
    HELMREICH, D
    JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 289 - 305
  • [32] Two-dimensional LBIC and Internal-Quantum-Efficiency investigations of grooved grain boundaries in multicrystalline silicon solar cells
    Dimassi, W.
    Derbali, L.
    Bouaicha, M.
    Bessais, B.
    Ezzaouia, H.
    SOLAR ENERGY, 2011, 85 (02) : 350 - 355
  • [33] GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON SOLAR-CELLS
    CHU, TL
    CHU, SS
    ABDERRASSOUL, R
    LIN, CJ
    LIN, CL
    STOKES, ED
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C147 - C147
  • [34] Effects of grain boundaries on the performance of polycrystalline silicon solar cells
    Joshi, D. P.
    Sharma, Kiran
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2012, 50 (09) : 661 - 669
  • [35] Structural Study of Small Angle Grain Boundaries in Multicrystalline Si
    Miyamura, Yoshiji
    Harada, Hirofumi
    Ito, Shun
    Chen, Jun
    Sekiguchi, Takashi
    DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, 2012, 725 : 157 - +
  • [36] Screen printed contacts formation by rapid thermal annealing in multicrystalline silicon solar cells
    ElOmari, H
    Boyeaux, JP
    Laugier, A
    CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 585 - 588
  • [37] INFLUENCE OF DISLOCATION DENSITY ON RECOMBINATION AT GRAIN-BOUNDARIES IN MULTICRYSTALLINE SILICON
    SEIFERT, W
    MORGENSTERN, G
    KITTLER, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (09) : 1687 - 1691
  • [38] GRAIN-BOUNDARIES IN MULTICRYSTALLINE SILICON - CHARACTERIZATION BY ADMITTANCE AND EBIC MEASUREMENTS
    HASSLER, C
    PENSL, G
    SCHULZ, M
    VOIGT, A
    STRUNK, HP
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 137 (02): : 463 - 484
  • [39] The correlation between spatial alignment of dislocations, grain orientation, and grain boundaries in multicrystalline silicon
    Schmid, E.
    Wuerzner, S.
    Funke, C.
    Behm, Th.
    Helbig, R.
    Paetzold, O.
    Berek, H.
    Stelter, M.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2012, 47 (03) : 229 - 236
  • [40] Multicrystalline silicon solar cells with porous silicon emitter
    Bilyalov, RR
    Lüdemann, R
    Wettling, W
    Stalmans, L
    Poortmans, J
    Nijs, J
    Schirone, L
    Sotgiu, G
    Strehlke, S
    Lévy-Clément, C
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2000, 60 (04) : 391 - 420
12345