Structural Change by Annealing Process at Σ9 Grain Boundaries in Multicrystalline Silicon Substrate for Solar Cells

被引：2

作者：

Tachibana, Tomihisa ^{[1
]}

Masuda, Junichi ^{[1
]}

Ogura, Atsushi ^{[1
]}

Ohshita, Yoshio ^{[2
]}

Arafune, Koji ^{[3
]}

机构：

[1] Meiji Univ, Sch Sci & Technol, Kawasaki, Kanagawa 2148571, Japan

[2] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan

[3] Univ Hyogo, Kakogawa, Hyogo 6712280, Japan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 07期

关键词：

ELECTRICAL-ACTIVITY; CRYSTALLIZATION; SI; NICKEL;

D O I：

10.1149/1.3423445

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Sigma 9 grain boundaries (Sigma 9 GBs) in the multicrystalline silicon substrates with and without annealing process were characterized by micro X-ray fluorescence, transmission electron microscopy (TEM) observation, and UV-Raman spectroscopy mapping. The Ni aggregations appeared at some Sigma 9 GBs only after annealing. The differences in the characteristics of GBs with and without annealing were evaluated. Clear structure changes were observed by TEM evaluation for the corresponding Sigma 9 GBs after annealing. At the same Sigma 9 GBs, the stress concentration was observed without an annealing process and disappeared with one. We consider that the Ni aggregation was enhanced by stress accumulation and silicide accelerated the atomic rearrangement at the Sigma 9 GBs. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3423445] All rights reserved.

引用

页码：B79 / B82

页数：4

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