Wafer-scale, stretchable nanomeshes from an ultrathin-support-layer assisted transfer

Metal nanomeshes possess unique electrical and mechanical properties for next-generation stretchable electronics. However, a critical unmet need lies in producing stretchable conductive nanomeshes at large scale with high uniformity and intactness. Here, we present a wafer-scale nondestructive transfer method by utilizing an ultrathin polyimide layer. This polyimide support layer allows etchant vapor to transmit through to etch the sacrificial layer underneath, while being continuous to support the nanomeshes during transfer before being removed completely after the transfer. From this simple yet effective method, we developed 4-in.-wafer-scale gold nanomeshes with low sheet resistance of 8.35 Omega/square, good transparency of 65% at 550 nm, and stretchability of 70%. Detailed vapor transmission studies reveal that etchant vapor indeed transmitted through the support layer, with realistic sacrificial etching time needed for transfer. Together, these results provide a practical pathway towards fabricating large-scale nanomesh based stretchable electronics, with applications ranging from on-skin electronics to implantable biomedical devices. We also expect this ultrathin support layer approach to be generally applicable to the processing of many other nanomaterials at large scale. Published by AIP Publishing.