Structural and Optical Characterization of ZnO Nanowires Grown on Alumina by Thermal Evaporation Method

被引:4
|
作者
Mute, A. [1 ,2 ]
Peres, M. [1 ]
Peiris, T. C. [2 ]
Lourenco, A. C. [3 ]
Jensen, Lars R. [2 ]
Monteiro, T. [1 ]
机构
[1] Univ Aveiro, Dept Fis & I3N, P-3810193 Aveiro, Portugal
[2] Univ Aalborg, Dept Mech Engn, Aalborg O, Denmark
[3] Univ Aveiro, Dept Fis & Ciceco, P-3810193 Aveiro, Portugal
关键词
ZnO; Nanowires; Thermal Evaporation; SEM; Raman; PL; ZINC-OXIDE NANOSTRUCTURES; SILICON SUBSTRATE; VAPOR-DEPOSITION; PHOTOLUMINESCENCE; NANORODS;
D O I
10.1166/jnn.2010.1386
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Zinc oxide nanowires have been grown on alumina substrate by thermal evaporation of zinc nanopowder in the presence of oxygen flow. The growth was performed under ambient pressure and without the use of foreign catalyst. Scanning electron microscopy (SEM) observation showed that the as-grown sample consists of bulk ZnO crystal on the substrate surface with nanowires growing from this base. Growth mechanism of the observed morphology is suggested to be governed by the change of zinc vapour supersaturation during the growth process. X-ray diffraction (XRD) measurement was used to identify the crystalline phase of the nanowires. Optical properties of the nanowires were investigated using Raman scattering and photoluminescence (PL). The appearance of dominant, Raman active E-2 (high) phonon mode in the Raman spectrum has confirmed the wurtzite hexagonal phase of the nanowires. With above bandgap excitation the low temperature PL recombination is dominated by donor bound exciton luminescence at similar to 3.37 eV with a narrow full width at half maximum. Free exciton emission is also seen at low temperature and can be observed up to room temperature. The optical data indicates that the grown nanowires have high optical quality.
引用
收藏
页码:2669 / 2673
页数:5
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