Fabrication of a Low-Loss SSC Using High-Dose Electron Beam Lithography Exposure With Negative PMMA Resist

被引：7
|
作者：
Liu, Yan [1 ]
Xu, Xuejun [1 ]
Xing, Bo [1 ]
Yu, Yude [1 ]
Yu, Jinzhong [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Optoelect, Beijing 100083, Peoples R China
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Silicon-on-insulator (SOI); spot-size converter (SSC); POLY(METHYLMETHACRYLATE) RESIST; SILICON; CIRCUIT; LINES;
D O I：
10.1109/LPT.2010.2040998
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A silicon-on-insulator optical fiber-to-waveguide spot-size converter (SSC) using Poly-MethylMethAcrylate (PMMA) is presented for integrated optical circuits. Unlike the conventional use of PMMA as a positive resist, it has been successfully used as a negative resist with high-dose electron exposure for the fabrication of ultrafine silicon wire waveguides. Additionally, this process is able to reduce the side-wall roughness, and substantially depresses the unwanted propagation loss. Exploiting this technology, the authors demonstrated that the SSC can improve coupling efficiency by as much as over 2.5 dB per coupling facet, compared with that of SSC fabricated with PMMA as a positive resist with the same dimension.
引用
收藏
页码：501 / 503
页数：3
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