Ultra-thin SiON and high-k HfO2 gate dielectric metrology using transmission electron microscopy

被引：1

作者：

Du, AY ^{[1
]}

Tung, CH ^{[1
]}

Freitag, BH ^{[1
]}

Zhang, WY ^{[1
]}

Lim, S ^{[1
]}

Ang, EH ^{[1
]}

Ng, D ^{[1
]}

机构：

[1] Inst Microelect, Singapore 117685, Singapore

来源：

IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2004年

关键词：

D O I：

10.1109/IPFA.2004.1345569

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra-thin nitrided SiO2 (10Angstrom SiON) and high-k HfO2 gate dielectric thin film metrology and chemical characteristics are studied using transmission electron microscopy (TEM). Different specimen preparation methods and TEM analytical techniques are compared to understand their impacts on the results. Ultra thin SiON thickness measured by using high resolution TEM (HRTEM), is different from results obtained by high resolution scanning TEM (HR-STEM) using high-angle annular dark field detector (HAADF) and also different from using electron energy loss spectrometry (EELS). A standard TEM metrology approach for ultra-thin gate dielectric needs to be established through out the industry and the best practices are suggested.

引用

页码：135 / 138

页数：4

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