Pulse Potential Confined Electrochemical Polishing on Gallium Arsenide Wafer

被引:3
|
作者
Han, Lianhuan [1 ]
Xu, Hantao [2 ,3 ]
Sartin, Matthew M. [2 ,3 ]
Hu, Zhenjiang [4 ,5 ]
Zhao, Xuesen [4 ,5 ]
Cao, Yongzhi [4 ,5 ]
Yan, Yongda [4 ,5 ]
Su, Jian-Jia [2 ,3 ]
Zhan, Dongping [2 ,3 ,6 ]
Tian, Zhong-Qun [2 ,3 ]
机构
[1] Xiamen Univ, Sch Aerosp Engn, Dept Mech & Elect Engn, Xiamen 361005, Peoples R China
[2] Xiamen Univ, State Key Lab Phys Chem Solid Surfaces PCOSS, Engn Res Ctr Electrochem Technol, Minist Educ,Coll Chem & Chem Engn, Xiamen 361005, Peoples R China
[3] Xiamen Univ, Dept Chem, Coll Chem & Chem Engn, Xiamen 361005, Peoples R China
[4] Harbin Inst Technol, Key Lab Microsyst & Microstruct Mfg, Minist Educ, Harbin 150001, Peoples R China
[5] Harbin Inst Technol, Ctr Precis Engn, Harbin 150001, Peoples R China
[6] Ningxia Univ, Coll Chem & Chem Engn, Dept Chem, Yinchuan 750021, Ningxia, Peoples R China
基金
中国国家自然科学基金;
关键词
electrochemical polishing; pulse potential polishing; electrochemically induced confined etching; mass transfer model; finite element analysis; FUNDAMENTAL-ASPECTS; METALS; MODE;
D O I
10.1149/1945-7111/abf96f
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Free of tool wear, residual stress, and surface damage, electrochemistry plays a significant role in precision machining. We report here a semiconductor polishing technique based on electrochemically induced chemical etching, in which the concentration distribution of electrogenerated etchant between the tool electrode and the semiconductor workpiece can be precisely controlled by the pulse frequency of the potential applied to the tool electrode. A theoretical model is established, and the finite element analysis shows that the concentration difference of the electrogenerated etchant at the peak and valley of the rough surface of the semiconductor workpiece is dependent on the frequency of the potential pulse. Consequently, the diffusion distance and concentration distribution of electrogenerated etchant at the tool electrode/electrolyte interface can be controlled effectively by tuning the frequency of pulse potential. Under a mechanical motion mode, the roughness of a raw GaAs workpiece can be reduced efficiently from 700 nm to 5.1 nm. This technique is ideal for the electrochemical polishing of semiconductor wafers.
引用
收藏
页数:6
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