Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers

被引:24
|
作者
Palmer, DJ [1 ]
Smowton, PM
Blood, P
Yeh, JY
Mawst, LJ
Tansu, N
机构
[1] Univ Wales Coll Cardiff, Sch Phys & Astron, Cardiff CF24 3YB, S Glam, Wales
[2] Univ Wisconsin, Dept Elect & Comp Engn, Reed Ctr Photon, Madison, WI 53706 USA
[3] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA
关键词
D O I
10.1063/1.1868070
中图分类号
O59 [应用物理学];
学科分类号
摘要
We compare the gain and radiative efficiency characteristics of an InGaAsN and an InGaAs laser structure where the devices are identical except for the nitrogen content and emission wavelength. We find that the inclusion of nitrogen has little impact on the gain spectra except for the required shift to longer wavelength and that the intrinsic gain-radiative current characteristics may be slightly better for the nitrogen-containing materials. The radiative efficency is reduced by a factor of 4 in the samples containing nitrogen due to increased nonradiative recombination. (C) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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