Parameters that control pulsed electron beam ablation of materials and film deposition processes

被引：55
|
作者：
Strikovski, M [1 ]
Harshavardhan, KS [1 ]
机构：
[1] NEOCERA Inc, Beltsville, MD 20705 USA
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 06期
关键词：
D O I：
10.1063/1.1541945
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Conditions for ablation of materials and film deposition were analyzed for a pulsed (similar to100 ns) electron beam produced by a channel-spark source. For dielectric materials, we found the existence of an optimal source voltage related to the saturation of the pulse current. Our analysis indicates a larger ablated mass, smaller optimal deposition rates (similar to0.25 Angstrom/pulse), and a larger optimal target to substrate distance relative to pulsed laser deposition process. (C) 2003 American Institute of Physics.
引用
收藏
页码：853 / 855
页数：3
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