Parameters that control pulsed electron beam ablation of materials and film deposition processes

Conditions for ablation of materials and film deposition were analyzed for a pulsed (similar to100 ns) electron beam produced by a channel-spark source. For dielectric materials, we found the existence of an optimal source voltage related to the saturation of the pulse current. Our analysis indicates a larger ablated mass, smaller optimal deposition rates (similar to0.25 Angstrom/pulse), and a larger optimal target to substrate distance relative to pulsed laser deposition process. (C) 2003 American Institute of Physics.