Magnetic properties of (Ga, Mn) As (110) epitaxial films

被引:1
|
作者
Ma, Jialin [1 ]
Wang, Hailong [1 ]
Yu, Zhifeng [1 ]
Wang, Xiaolei [1 ]
Zhao, Jianhua [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China
关键词
ATOMIC LAYERS; MANIPULATION; ANISOTROPY; (GA; MN)AS;
D O I
10.1209/0295-5075/118/17003
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Magnetic properties of (Ga, Mn) As films epitaxied on GaAs (110) substrates have been investigated. Both magnetic and magnetotransport measurements indicate dominant inplane magnetic anisotropies for as-grown and annealed samples. Moreover, obvious in-plane spin reorientation transition upon the change of temperature has been observed for the as-grown samples, which disappears after annealing. The above phenomena are shown to be correlated with the competition between the cubic and the uniaxial magnetic anisotropic fields. The relative strengths of these two terms are quantitatively obtained by the planar Hall measurements and can be tuned by annealing. For all the annealed (Ga, Mn) As (110) films, a dominant [-110] uniaxial magnetic easy axis is found and the mechanism is discussed. Our work provides useful information for understanding the origin of magnetic anisotropies in (Ga, Mn) As films. Copyright (C) EPLA, 2017
引用
收藏
页数:5
相关论文
共 50 条
  • [41] Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor
    Andrearczyk, Tomasz
    Levchenko, Khrystyna
    Sadowski, Janusz
    Domagala, Jaroslaw Z.
    Kaleta, Anna
    Dluzewski, Piotr
    Wrobel, Jerzy
    Figielski, Tadeusz
    Wosinski, Tadeusz
    MATERIALS, 2020, 13 (23) : 1 - 14
  • [42] Impact of bismuth incorporation into (Ga,Mn)As thin films on their structural and magnetic properties
    Levchenko, K.
    Andrearczyk, T.
    Domagala, J. Z.
    Wosinski, T.
    Figielski, T.
    Sadowski, J.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 8, 2015, 12 (08): : 1152 - 1155
  • [43] EPITAXIAL-TAU (MN,NI)AL/(AL,GA)AS HETEROSTRUCTURES - MAGNETIC AND MAGNETOOPTIC PROPERTIES
    CHEEKS, TL
    BRASIL, MJSP
    DEBOECK, J
    HARBISON, JP
    SANDS, T
    TANAKA, M
    SCHERER, A
    KERAMIDAS, VG
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) : 6121 - 6123
  • [44] A comparative study on magnetic and magnetotransport properties in (Ga, Mn)N epitaxial films grown on undoped and n-type GaN by PEMBE
    Ham, MH
    Yoon, S
    Park, Y
    Myoung, JM
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (34) : 6139 - 6145
  • [45] Magnetic Properties of Epitaxial (Ge,Mn)Te Thin Films with Varying Crystal Stoichiometry
    Knoff, W.
    Domukhovski, V.
    Dybko, K.
    Dziawa, P.
    Gorska, M.
    Jakiela, R.
    Lusakowska, E.
    Reszka, A.
    Taliashvili, B.
    Story, T.
    Anderson, J. R.
    Rotundu, C. R.
    ACTA PHYSICA POLONICA A, 2008, 114 (05) : 1159 - 1165
  • [46] Magnetic properties of epitaxial CrN films
    Ney, A.
    Rajaram, R.
    Parkin, S. S. P.
    Kammermeier, T.
    Dhar, S.
    APPLIED PHYSICS LETTERS, 2006, 89 (11)
  • [47] UNIAXIAL MAGNETIC-ANISOTROPY IN EPITAXIAL (110) NI FILMS
    KURIKI, S
    IEEE TRANSACTIONS ON MAGNETICS, 1976, 12 (02) : 107 - 113
  • [48] Magnetic properties of epitaxial (110) multilayer films of DyFe2 and YFe2
    Sawicki, M
    Bowden, GJ
    de Groot, PAJ
    Rainford, BD
    Ward, RCC
    Wells, MR
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 6839 - 6841
  • [49] The electronic structure of homogeneous ferromagnetic (Ga, Mn)N epitaxial films
    Piskorska-Hommel, E.
    Winiarski, M. J.
    Kunert, G.
    Demchenko, I. N.
    Roshchupkina, O. D.
    Grenzer, J.
    Falta, J.
    Hommel, D.
    Holy, V.
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (06)
  • [50] Picosecond dynamics of the photoinduced spin polarization in epitaxial (Ga,Mn)As films
    Kimel, AV
    Astakhov, GV
    Schott, GM
    Kirilyuk, A
    Yakovlev, DR
    Karczewski, G
    Ossau, W
    Schmidt, G
    Molenkamp, LW
    Rasing, T
    PHYSICAL REVIEW LETTERS, 2004, 92 (23) : 237203 - 1