Preparation and properties of Bi4Ti3O12 thin films by electron cyclotron resonance sputtering

被引：0
|
作者：
Maiwa, H
Ichinose, N
机构：
来源：
ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin films of ferroelectric Bi4Ti3O12 were deposited on Pt- or Ir- coated oxidized Si substrate by electron cyclotron resonance (ECR) sputtering using ceramic targets. Crystal structure and dielectric properties of the films were investigated as functions of sputtering conditions such as substrate temperature, sputtering gas pressure and used substrate. Using a target with excess Bi content compared to stoichiometric composition was required to compensate Bi re-evaporation from the substrate and to obtain a perovskite single phase at 600 degrees C. (117)-oriented films exhibited ferroelectric hysteresis loops The remanent polarization and coercive field of the Bi4Ti3O12 films on Pt/SiO2/Si were 10.9 mu C/cm(2) and 149 kV/cm, respectively. Those of the films on Ir/SiO2/Si were 3.6 mu C/cm(2) and 99 kV/cm, respectively.
引用
收藏
页码：455 / 458
页数：4
相关论文
共 50 条
  • [31] Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films
    Bukowski, TJ
    Alexander, TP
    Uhlmann, DR
    Teowee, G
    McCarthy, KC
    ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 1996, : 589 - 592
  • [32] Preparation of PZT, PLZT and Bi4Ti3O12 thin films from oxide precursors
    Araújo, EB
    Eiras, JA
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1999, 19 (6-7) : 1453 - 1456
  • [33] Preparation of Bi4Ti3O12 thin films by pulsed laser deposition at room temperature
    Zeng, Jianming
    Zhang, Miao
    Gao, Jianxia
    Zheng, Lirong
    Wang, Lianwei
    Lin, Chenglu
    Pignolet, A.
    Curran, C.
    Hesse, D.
    Yadian Yu Shengguang/Piezoelectrics and Acoustooptics, 1999, 21 (02): : 131 - 135
  • [34] Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering
    Jo, W.
    Applied Physics A: Materials Science and Processing, 2001, 72 (01): : 81 - 84
  • [35] Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering
    W. Jo
    Applied Physics A, 2001, 72 : 81 - 84
  • [36] Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering
    Jo, W
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 72 (01): : 81 - 84
  • [37] Preparation and pyroelectric properties of Bi4Ti3O12 based ceramics
    Ichinose, N
    Takahashi, Y
    FERROELECTRICS, 2001, 258 (1-4) : 31 - 36
  • [38] Photorefractive properties of Bi4Ti3O12
    Yue, XF
    Xu, JJ
    Mersch, F
    Rupp, RA
    Kratzig, E
    PHYSICAL REVIEW B, 1997, 55 (15): : 9495 - 9502
  • [39] Low Temperature Growth of Bi4Ti3O12 Thin Films by MOCVD and their Electrical Properties
    Denki Gakkai Ronbunshi C Denshi Joho Shisutemu Bumonshi, 3 (233):
  • [40] Influence of deposition temperature on structural and ferroelectric properties of Bi4Ti3O12 thin films
    Iljinas, Aleksandras
    Stankus, Vytautas
    APPLIED SURFACE SCIENCE, 2016, 381 : 2 - 5
12345