Active Pulse Shaping Circuit for Bandwidth Enhancement of High-Brightness LEDs using GaN Devices

被引：0

作者：

Modepalli, Kumar ^{[1
]}

Parsa, Leila ^{[2
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Univ Calif Santa Cruz, Dept Elect Engn, Santa Cruz, CA 95064 USA

来源：

THIRTY-THIRD ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2018) | 2018年

关键词：

Light Detection and Ranging (LiDAR); Time-of Flight (ToF); Internet of Things(IoT); Pulse Shaping; Visible Light Communications (VLC); Light- Fidelity(Li-Fi); High Brightness Light Emitting Diodes(HB-LED); DRIVER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HB-LED sources which generates high speed optical pulses are desired in applications such as Light Detection and Ranging (LiDAR) for Time-of-Flight (ToF) measurements and Visible Light Communications (VLC). Inherent optical bandwidth of HB-LEDs plays a major role in generating high speed optical pulse outputs. Pulse shaping the current flowing through HB-LEDs, is a technique used for their bandwidth enhancement. In this paper, a new active pulse shaping circuit that enhances the bandwidth of HB-LEDs by 3x is presented. In addition, this pulse shaping circuit employed with constant current output LED drivers provides illumination control of HB-LEDs. Further, realization of the proposed pulse shaping circuit with GaN-based HEMTs resulted in performance improvement.

引用

页码：3471 / 3476

页数：6

共 45 条

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