Characterization of a Scalable Donor-Based Singlet-Triplet Qubit Architecture in Silicon

被引:9
|
作者
Pakkiam, Prasanna [1 ]
House, Matthew G. [1 ]
Koch, Matthias [1 ]
Simmons, Michelle Y. [1 ]
机构
[1] Univ New South Wales, Sch Phys, Australian Res Council, Ctr Excellence Quantum Computat & Commun Technol, Sydney, NSW 2052, Australia
基金
澳大利亚研究理事会;
关键词
Singlet-triplet; RF; Si:P; STM; QUANTUM COMPUTATION;
D O I
10.1021/acs.nanolett.8b00006
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present a donor-based quadruple-quantum-dot device, designed to host two singlet-triplet qubits fabricated by scanning tunnelling microscope lithography, with just two leads per qubit. The design is geometrically compact, with each pair of dots independently controlled via one gate and one reservoir. The reservoirs both supply electrons for the dots and measure the singlet-triplet state of each qubit via dispersive sensing. We verify the locations of the four phosphorus donor dots via an electrostatic model of the device. We study one of the observed singlet-triplet states with a tunnel coupling of 39 GHz and a S-0-to-T_ decay of 2 ms at zero detuning. We measure a 5 GHz electrostatic interaction between two pairs of dots separated by 65 nm. The results outline a low gate-density pathway to a scalable 1D building block of atomic-precision singlet-triplet qubits using donors with dispersive readout.
引用
收藏
页码:4081 / 4085
页数:5
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