Optical lithography at half the Rayleigh resolution limit by two-photon absorption resist

被引:0
|
作者
Ezaki, H [1 ]
Shibuya, M [1 ]
机构
[1] Tokyo Inst Polytech, Fac Engn, Atsugi, Kanagawa 2430297, Japan
来源
关键词
optical lithography; polarization-dependent two-photon absorption; resolution enhancement technology;
D O I
10.1117/12.485500
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Recently, it has shown that Rayleigh diffraction limit (a size lambda/2) is overcome using entangled-photon pairs, where lambda is the optical wavelength. However, the intensity of the entangled-photon pairs generated from optical parametric down-conversion are so weak that it is not enough to attain the practical throughput. We propose a new method which enables to enhance the resolution over the Rayleigh limit with coherent laser light by using polarization-dependent two-photon absorption resist.
引用
收藏
页码:1270 / 1275
页数:6
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